Name: IAUS200N08S5N023ATMA1
Brand: Infineon Technologies
SKU: IAUS200N08S5N023ATMA1
Price: 5.79 USD
Availability: InStock

REF: IAUS200N08S5N023ATMA1 Infineon Technologies

IAUS200N08S5N023ATMA1

Infineon Technologies

MOSFET N-CH 80V 200A HSOG-8

IAUS200N08S5N023ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 80V 200A HSOG-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSMD, Gull Wing.

Datasheet Request a Quote

In Stock: 1,949

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7670 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOG-8-1
Package / Case	8-PowerSMD, Gull Wing