Name: IAUS165N08S5N029ATMA1
Brand: Infineon Technologies
SKU: IAUS165N08S5N029ATMA1
Price: 4.83 USD
Availability: InStock

REF: IAUS165N08S5N029ATMA1 Infineon Technologies

IAUS165N08S5N029ATMA1

Infineon Technologies

MOSFET N-CH 80V 165A HSOG-8

IAUS165N08S5N029ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 80V 165A HSOG-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSMD, Gull Wing.

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In Stock: 2,946

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6370 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOG-8-1
Package / Case	8-PowerSMD, Gull Wing