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FZ800R45KL3B5NOSA2

In Stock: 47
FZ800R45KL3B5NOSA2 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FZ800R45KL3B5NOSA2 Infineon Technologies
FZ800R45KL3B5NOSA2

Infineon Technologies

IGBT MOD 4500V 1600A 9000W

FZ800R45KL3B5NOSA2 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 4500V 1600A 9000W. Key specifications: mounting type Chassis Mount, operating temperature -50°C ~ 125°C, package / case Module, current - collector (ic) (max) 1600 A.

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In Stock: 47

Specifications

15 parameters
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)4500 V
Current - Collector (Ic) (Max)1600 A
Power - Max9000 W
Vce(on) (Max) @ Vge, Ic2.85V @ 15V, 800A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce3.1 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-50°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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