FZ2000R33HE4BOSA1

In Stock: 10
FZ2000R33HE4BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FZ2000R33HE4BOSA1 Infineon Technologies
FZ2000R33HE4BOSA1

Infineon Technologies

IGBT MOD IHV IHM T XHP 3 3-6 5K

FZ2000R33HE4BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD IHV IHM T XHP 3 3-6 5K. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module, current - collector (ic) (max) 2000 A.

In Stock: 10

Specifications

15 parameters
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationSingle Switch
Voltage - Collector Emitter Breakdown (Max)3300 V
Current - Collector (Ic) (Max)2000 A
Power - Max4.2 mW
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 2kA (Typ)
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce280 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-IHVB190-3

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