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FZ1800R17HE4B9HOSA2

In Stock: 4,498
FZ1800R17HE4B9HOSA2 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FZ1800R17HE4B9HOSA2 Infineon Technologies
FZ1800R17HE4B9HOSA2

Infineon Technologies

IGBT MODULE 1700V 1800A

FZ1800R17HE4B9HOSA2 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1700V 1800A. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 1800 A.

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In Stock: 4,498

Specifications

15 parameters
Product StatusActive
IGBT Type-
ConfigurationSingle Switch
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector (Ic) (Max)1800 A
Power - Max11500 W
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 1800A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce145 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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