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FZ1800R12HP4B9HOSA2

In Stock: 393
FZ1800R12HP4B9HOSA2 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FZ1800R12HP4B9HOSA2 Infineon Technologies
FZ1800R12HP4B9HOSA2

Infineon Technologies

IGBT MODULE 1200V 2700A

FZ1800R12HP4B9HOSA2 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1200V 2700A. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 2700 A.

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In Stock: 393

Specifications

15 parameters
Product StatusActive
IGBT TypeTrench
ConfigurationSingle Switch
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)2700 A
Power - Max10500 W
Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 1800A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce110 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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