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FZ1200R45KL3B5NOSA1

In Stock: 5,827
FZ1200R45KL3B5NOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FZ1200R45KL3B5NOSA1 Infineon Technologies
FZ1200R45KL3B5NOSA1

Infineon Technologies

IGBT MODULE 4500V 1200A

FZ1200R45KL3B5NOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 4500V 1200A. Key specifications: mounting type Chassis Mount, operating temperature -50°C ~ 125°C, package / case Module, current - collector (ic) (max) 1200 A.

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In Stock: 5,827

Specifications

15 parameters
Product StatusActive
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)4500 V
Current - Collector (Ic) (Max)1200 A
Power - Max13500 W
Vce(on) (Max) @ Vge, Ic2.85V @ 15V, 1200A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce280 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-50°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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