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FS75R12W2T4BOMA1

In Stock: 5
FS75R12W2T4BOMA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FS75R12W2T4BOMA1 Infineon Technologies
FS75R12W2T4BOMA1

Infineon Technologies

IGBT MOD 1200V 107A 375W

FS75R12W2T4BOMA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 107A 375W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 107 A.

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In Stock: 5

Specifications

15 parameters
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationFull Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)107 A
Power - Max375 W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 75A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce4.3 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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