Name: FS50R07N2E4BOSA1
Brand: Infineon Technologies
SKU: FS50R07N2E4BOSA1
Availability: InStock

REF: FS50R07N2E4BOSA1 Infineon Technologies

FS50R07N2E4BOSA1

IGBT MODULE 650V 70A 190W

FS50R07N2E4BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 650V 70A 190W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 70 A.

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In Stock: 9,449

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	-
Configuration	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	70 A
Power - Max	190 W
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 50A
Current - Collector Cutoff (Max)	1 mA

Input Capacitance (Cies) @ Vce	3.1 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module