Name: FP50R12N2T7PBPSA1
Brand: Infineon Technologies
SKU: FP50R12N2T7PBPSA1
Price: 144.92 USD
Availability: InStock

REF: FP50R12N2T7PBPSA1 Infineon Technologies

FP50R12N2T7PBPSA1

Infineon Technologies

1200 V, 50 A PIM IGBT MODULE

FP50R12N2T7PBPSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. 1200 V, 50 A PIM IGBT MODULE. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 175°C (TJ), package / case Module, current - collector (ic) (max) 50 A.

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In Stock: 10

Specifications

15 parameters

Product Status	Active
IGBT Type	Trench Field Stop
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Power - Max	20 mW
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 25A
Current - Collector Cutoff (Max)	4 µA

Input Capacitance (Cies) @ Vce	11.1 nF @ 25 V
Input	Three Phase Bridge Rectifier
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	AG-ECONO2B