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FP50R12KE3BOSA1

In Stock: 1,588
FP50R12KE3BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FP50R12KE3BOSA1 Infineon Technologies
FP50R12KE3BOSA1

Infineon Technologies

IGBT MOD 1200V 75A 280W

FP50R12KE3BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 75A 280W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C (TJ), package / case Module, current - collector (ic) (max) 75 A.

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In Stock: 1,588

Specifications

15 parameters
Product StatusActive
IGBT TypeNPT
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)75 A
Power - Max280 W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 50A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce3.5 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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