FP50R07N2E4BOSA1

In Stock: 2,564
FP50R07N2E4BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FP50R07N2E4BOSA1 Infineon Technologies
FP50R07N2E4BOSA1

Infineon Technologies

IGBT MODULE 650V 70A

FP50R07N2E4BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 650V 70A. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 70 A.

In Stock: 2,564

Specifications

15 parameters
Product StatusDiscontinued at Digi-Key
IGBT TypeTrench Field Stop
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)70 A
Power - Max-
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 50A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce3.1 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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