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FP35R12W2T4BOMA1

In Stock: 2,305
FP35R12W2T4BOMA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FP35R12W2T4BOMA1 Infineon Technologies
FP35R12W2T4BOMA1

Infineon Technologies

IGBT MOD 1200V 54A 215W

FP35R12W2T4BOMA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 54A 215W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 54 A.

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In Stock: 2,305

Specifications

15 parameters
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)54 A
Power - Max215 W
Vce(on) (Max) @ Vge, Ic2.25V @ 15V, 35A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce2 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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