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FF800R12KE3NOSA1

In Stock: 2
FF800R12KE3NOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FF800R12KE3NOSA1 Infineon Technologies
FF800R12KE3NOSA1

Infineon Technologies

IGBT MOD 1200V 1200A 3900W

FF800R12KE3NOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 1200A 3900W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 1200 A.

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In Stock: 2

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)1200 A
Power - Max3900 W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 800A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce57 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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