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FF650R17IE4DB2BOSA1

In Stock: 4,863
FF650R17IE4DB2BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FF650R17IE4DB2BOSA1 Infineon Technologies
FF650R17IE4DB2BOSA1

Infineon Technologies

IGBT MODULE 1700V 4150W

FF650R17IE4DB2BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1700V 4150W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, power - max 4150 W.

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In Stock: 4,863

Specifications

15 parameters
Product StatusActive
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector (Ic) (Max)-
Power - Max4150 W
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 650A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce54 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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