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FF225R12ME3BOSA1

In Stock: 183
FF225R12ME3BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FF225R12ME3BOSA1 Infineon Technologies
FF225R12ME3BOSA1

Infineon Technologies

IGBT MOD 1200V 325A 1150W

FF225R12ME3BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 325A 1150W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 325 A.

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In Stock: 183

Specifications

15 parameters
Product StatusNot For New Designs
IGBT TypeTrench Field Stop
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)325 A
Power - Max1150 W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 225A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce16 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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