Name: FF200R12MT4BOMA1
Brand: Infineon Technologies
SKU: FF200R12MT4BOMA1
Availability: InStock

REF: FF200R12MT4BOMA1 Infineon Technologies

FF200R12MT4BOMA1

IGBT MODULE 1200V 1050W

FF200R12MT4BOMA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1200V 1050W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, power - max 1050 W.

Datasheet Request a Quote

In Stock: 8,714

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	Trench Field Stop
Configuration	2 Independent
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	-
Power - Max	1050 W
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A
Current - Collector Cutoff (Max)	1 mA

Input Capacitance (Cies) @ Vce	14 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module