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FF150R12MS4GBOSA1

In Stock: 2,729
FF150R12MS4GBOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FF150R12MS4GBOSA1 Infineon Technologies
FF150R12MS4GBOSA1

Infineon Technologies

IGBT MOD 1200V 225A 1250W

FF150R12MS4GBOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 225A 1250W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 225 A.

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In Stock: 2,729

Specifications

15 parameters
Product StatusActive
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)225 A
Power - Max1250 W
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 150A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce11 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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