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FF1200R17KE3NOSA1

In Stock: 3,195
FF1200R17KE3NOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FF1200R17KE3NOSA1 Infineon Technologies
FF1200R17KE3NOSA1

Infineon Technologies

IGBT MODULE VCES 1700V 1200A

FF1200R17KE3NOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE VCES 1700V 1200A. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, power - max 595000 W.

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In Stock: 3,195

Specifications

15 parameters
Product StatusNot For New Designs
IGBT Type-
ConfigurationSingle Chopper
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector (Ic) (Max)-
Power - Max595000 W
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 1200A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce110 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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