Name: FF1200R12KE3NOSA1
Brand: Infineon Technologies
SKU: FF1200R12KE3NOSA1
Availability: InStock

REF: FF1200R12KE3NOSA1 Infineon Technologies

FF1200R12KE3NOSA1

IGBT MODULE 1200V 5000W

FF1200R12KE3NOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1200V 5000W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, power - max 5000 W.

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In Stock: 3,509

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	-
Configuration	2 Independent
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	-
Power - Max	5000 W
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 1200A
Current - Collector Cutoff (Max)	5 mA

Input Capacitance (Cies) @ Vce	86 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module