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FD900R12IP4DBOSA1

In Stock: 2,474
FD900R12IP4DBOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FD900R12IP4DBOSA1 Infineon Technologies
FD900R12IP4DBOSA1

Infineon Technologies

IGBT MOD 1200V 900A 5100W

FD900R12IP4DBOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 900A 5100W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 900 A.

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In Stock: 2,474

Specifications

15 parameters
Product StatusActive
IGBT Type-
ConfigurationSingle Chopper
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)900 A
Power - Max5100 W
Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 900A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce54 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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