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FD16001200R17HP4B2BOSA2

In Stock: 3,719
FD16001200R17HP4B2BOSA2 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FD16001200R17HP4B2BOSA2 Infineon Technologies
FD16001200R17HP4B2BOSA2

Infineon Technologies

IGBT MODULE VCES 1700V 1600A

FD16001200R17HP4B2BOSA2 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE VCES 1700V 1600A. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, power - max 10500 W.

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In Stock: 3,719

Specifications

15 parameters
Product StatusActive
IGBT Type-
ConfigurationDual Brake Chopper
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector (Ic) (Max)-
Power - Max10500 W
Vce(on) (Max) @ Vge, Ic2.25V @ 15V, 1600A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce130 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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