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FD1000R17IE4DB2BOSA1

In Stock: 16
FD1000R17IE4DB2BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: FD1000R17IE4DB2BOSA1 Infineon Technologies
FD1000R17IE4DB2BOSA1

Infineon Technologies

IGBT MOD 1700V 1390A 6250W

FD1000R17IE4DB2BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1700V 1390A 6250W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 1390 A.

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In Stock: 16

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector (Ic) (Max)1390 A
Power - Max6250 W
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 1000A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce81 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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