Name: FD-DF80R12W1H3_B52
Brand: Infineon Technologies
SKU: FD-DF80R12W1H3_B52
Availability: InStock

REF: FD-DF80R12W1H3_B52 Infineon Technologies

FD-DF80R12W1H3_B52

IGBT MOD 1200V 40A 215W

FD-DF80R12W1H3_B52 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 40A 215W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 40 A.

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In Stock: 7,839

Specifications

15 parameters

Product Status	Active
IGBT Type	Trench Field Stop
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	40 A
Power - Max	215 W
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Current - Collector Cutoff (Max)	1 mA

Input Capacitance (Cies) @ Vce	235 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module