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F4150R12KS4BOSA1

In Stock: 10
F4150R12KS4BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: F4150R12KS4BOSA1 Infineon Technologies
F4150R12KS4BOSA1

Infineon Technologies

IGBT MOD 1200V 180A 960W

F4150R12KS4BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 180A 960W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 180 A.

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In Stock: 10

Specifications

15 parameters
Product StatusActive
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)180 A
Power - Max960 W
Vce(on) (Max) @ Vge, Ic3.75V @ 15V, 150A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce10 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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