Name: F1235R12KT4GBOSA1
Brand: Infineon Technologies
SKU: F1235R12KT4GBOSA1
Availability: InStock

REF: F1235R12KT4GBOSA1 Infineon Technologies

F1235R12KT4GBOSA1

IGBT MOD 1200V 35A 210W

F1235R12KT4GBOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 35A 210W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module, current - collector (ic) (max) 35 A.

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In Stock: 1,892

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	Trench Field Stop
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	35 A
Power - Max	210 W
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 35A
Current - Collector Cutoff (Max)	1 mA

Input Capacitance (Cies) @ Vce	2 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module