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DF75R12W1H4FB11BOMA2

In Stock: 5,653
DF75R12W1H4FB11BOMA2 - Infineon Technologies - Transistors - IGBTs - Modules
REF: DF75R12W1H4FB11BOMA2 Infineon Technologies
DF75R12W1H4FB11BOMA2

Infineon Technologies

IGBT MOD 1200V 25A 20MW

DF75R12W1H4FB11BOMA2 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 25A 20MW. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module, current - collector (ic) (max) 25 A.

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In Stock: 5,653

Specifications

15 parameters
Product StatusLast Time Buy
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)25 A
Power - Max20 mW
Vce(on) (Max) @ Vge, Ic2.65V @ 15V, 25A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce2 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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