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DF200R12W1H3FB11BOMA1

In Stock: 6,213
DF200R12W1H3FB11BOMA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: DF200R12W1H3FB11BOMA1 Infineon Technologies
DF200R12W1H3FB11BOMA1

Infineon Technologies

IGBT MOD 1200V 30A 20MW

DF200R12W1H3FB11BOMA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 30A 20MW. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 30 A.

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In Stock: 6,213

Specifications

15 parameters
Product StatusDiscontinued at Digi-Key
IGBT TypeTrench Field Stop
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)30 A
Power - Max20 mW
Vce(on) (Max) @ Vge, Ic1.45V @ 15V, 30A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce6.15 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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