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DF200R12KE3HOSA1

In Stock: 6,200
DF200R12KE3HOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: DF200R12KE3HOSA1 Infineon Technologies
DF200R12KE3HOSA1

Infineon Technologies

IGBT MODULE 1200V 1040W

DF200R12KE3HOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1200V 1040W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, power - max 1040 W.

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In Stock: 6,200

Specifications

15 parameters
Product StatusActive
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)-
Power - Max1040 W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 200A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce14 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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