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DDB6U75N16W1RBOMA1

In Stock: 2
DDB6U75N16W1RBOMA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: DDB6U75N16W1RBOMA1 Infineon Technologies
DDB6U75N16W1RBOMA1

Infineon Technologies

IGBT MOD 1200V 69A 335W

DDB6U75N16W1RBOMA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 69A 335W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 69 A.

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In Stock: 2

Specifications

15 parameters
Product StatusActive
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)69 A
Power - Max335 W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 50A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce2.8 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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