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DD1200S12H4HOSA1

In Stock: 1,912
DD1200S12H4HOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: DD1200S12H4HOSA1 Infineon Technologies
DD1200S12H4HOSA1

Infineon Technologies

IGBT MODULE 1200V 1200A

DD1200S12H4HOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1200V 1200A. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 1200 A.

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In Stock: 1,912

Specifications

15 parameters
Product StatusActive
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)1200 A
Power - Max1200000 W
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 1200A
Current - Collector Cutoff (Max)-
Input Capacitance (Cies) @ Vce-
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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