Name: BUZ30AHXKSA1
Brand: Infineon Technologies
SKU: BUZ30AHXKSA1
Availability: InStock

REF: BUZ30AHXKSA1 Infineon Technologies

BUZ30AHXKSA1

MOSFET N-CH 200V 21A TO220-3

BUZ30AHXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 21A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 7,570

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3