Name: BTS282ZE3180AATMA2
Brand: Infineon Technologies
SKU: BTS282ZE3180AATMA2
Price: 7.25 USD
Availability: InStock

REF: BTS282ZE3180AATMA2 Infineon Technologies

BTS282ZE3180AATMA2

Infineon Technologies

MOSFET N-CH 49V 80A TO263-7

BTS282ZE3180AATMA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 49V 80A TO263-7. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

Datasheet Request a Quote

In Stock: 7,153

Specifications

17 parameters

Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	49 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id	2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	232 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4800 pF @ 25 V
FET Feature	Temperature Sensing Diode
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-1
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA