Name: BTS115AE6327
Brand: Infineon Technologies
SKU: BTS115AE6327
Availability: InStock

REF: BTS115AE6327 Infineon Technologies

BTS115AE6327

N-CHANNEL POWER MOSFET

BTS115AE6327 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 1,793

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V
Current - Continuous Drain (Id) @ 25°C	15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	120mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	735 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	50W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3