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BSZ180P03NS3EGATMA1

In Stock: 2,822
BSZ180P03NS3EGATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSZ180P03NS3EGATMA1 Infineon Technologies
BSZ180P03NS3EGATMA1

Infineon Technologies

MOSFET P-CH 30V 9A/39.5A TSDSON

BSZ180P03NS3EGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 30V 9A/39.5A TSDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 2,822

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 39.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.1V @ 48µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2220 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerTDFN

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