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BSZ16DN25NS3GATMA1

In Stock: 2,961
BSZ16DN25NS3GATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSZ16DN25NS3GATMA1 Infineon Technologies
BSZ16DN25NS3GATMA1

Infineon Technologies

MOSFET N-CH 250V 10.9A 8TSDSON

BSZ16DN25NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 250V 10.9A 8TSDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 2,961

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs11.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 100 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerTDFN

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