Name: BSZ130N03MSGATMA1
Brand: Infineon Technologies
SKU: BSZ130N03MSGATMA1
Price: 0.89 USD
Availability: InStock

REF: BSZ130N03MSGATMA1 Infineon Technologies

BSZ130N03MSGATMA1

Infineon Technologies

MOSFET N-CH 30V 9A/35A 8TSDSON

BSZ130N03MSGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 30V 9A/35A 8TSDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

Datasheet Request a Quote

In Stock: 8,926

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerTDFN