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BSZ123N08NS3GATMA1

In Stock: 2,136
BSZ123N08NS3GATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSZ123N08NS3GATMA1 Infineon Technologies
BSZ123N08NS3GATMA1

Infineon Technologies

MOSFET N-CH 80V 10A/40A 8TSDSON

BSZ123N08NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 80V 10A/40A 8TSDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 2,136

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs12.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 40 V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 66W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerVDFN

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