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BSZ120P03NS3GATMA1

In Stock: 5,788
BSZ120P03NS3GATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSZ120P03NS3GATMA1 Infineon Technologies
BSZ120P03NS3GATMA1

Infineon Technologies

MOSFET P-CH 30V 11A/40A 8TSDSON

BSZ120P03NS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 30V 11A/40A 8TSDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 5,788

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.1V @ 73µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3360 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerTDFN

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