Name: BSZ100N06LS3GATMA1
Brand: Infineon Technologies
SKU: BSZ100N06LS3GATMA1
Price: 1.32 USD
Availability: InStock

REF: BSZ100N06LS3GATMA1 Infineon Technologies

BSZ100N06LS3GATMA1

Infineon Technologies

MOSFET N-CH 60V 11A/20A 8TSDSON

BSZ100N06LS3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 60V 11A/20A 8TSDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 9,138

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3500 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerVDFN