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BSZ088N03LSGATMA1

In Stock: 3,629
BSZ088N03LSGATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: BSZ088N03LSGATMA1 Infineon Technologies
BSZ088N03LSGATMA1

Infineon Technologies

MOSFET N-CH 30V 12A/40A 8TSDSON

BSZ088N03LSGATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 30V 12A/40A 8TSDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 3,629

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerTDFN

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