Name: BSS806NEH6327XTSA1
Brand: Infineon Technologies
SKU: BSS806NEH6327XTSA1
Price: 0.52 USD
Availability: InStock

REF: BSS806NEH6327XTSA1 Infineon Technologies

BSS806NEH6327XTSA1

Infineon Technologies

MOSFET N-CH 20V 2.3A SOT23-3

BSS806NEH6327XTSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 20V 2.3A SOT23-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

Datasheet Request a Quote

In Stock: 1,614

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V
Rds On (Max) @ Id, Vgs	57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id	750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 2.5 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	529 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT23
Package / Case	TO-236-3, SC-59, SOT-23-3