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BSP52H6327XTSA1

In Stock: 3,044
BSP52H6327XTSA1 - Infineon Technologies - Transistors - Bipolar (BJT) - Single
REF: BSP52H6327XTSA1 Infineon Technologies
BSP52H6327XTSA1

Infineon Technologies

TRANS NPN DARL 80V 1A SOT223-4

BSP52H6327XTSA1 is a Transistors - Bipolar (BJT) - Single manufactured by Infineon Technologies. TRANS NPN DARL 80V 1A SOT223-4. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-261-4, TO-261AA, current - collector (ic) (max) 1 A.

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In Stock: 3,044

Specifications

13 parameters
Product StatusNot For New Designs
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic1.8V @ 1mA, 1A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 500mA, 10V
Power - Max1.5 W
Frequency - Transition200MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackagePG-SOT223-4

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