RFQ List My Parts 0
Get a Quote Contact

BSP52E6327HTSA1

In Stock: 6,052
BSP52E6327HTSA1 - Infineon Technologies - Transistors - Bipolar (BJT) - Single
REF: BSP52E6327HTSA1 Infineon Technologies
BSP52E6327HTSA1

Infineon Technologies

TRANS NPN DARL 80V 1A SOT223-4

BSP52E6327HTSA1 is a Transistors - Bipolar (BJT) - Single manufactured by Infineon Technologies. TRANS NPN DARL 80V 1A SOT223-4. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-261-4, TO-261AA, current - collector (ic) (max) 1 A.

Datasheet Request a Quote

In Stock: 6,052

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic1.8V @ 1mA, 1A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 500mA, 10V
Power - Max1.5 W
Frequency - Transition200MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackagePG-SOT223-4

Related Products

SMBTA06E6433HTMA1 - Infineon Technologies Infineon Technologies SMBTA06E6433HTMA1 0.05820 RFQ BC856ALT3G - onsemi onsemi BC856ALT3G 0.02000 RFQ MPS2907ARLRM - onsemi onsemi MPS2907ARLRM 0.04000 RFQ PDTA144TMB,315 - Nexperia USA Inc. Nexperia USA Inc. PDTA144TMB,315 0.02000 RFQ PMSS3906,115 - Nexperia USA Inc. Nexperia USA Inc. PMSS3906,115 0.02893 RFQ MSD601-RT1G - onsemi onsemi MSD601-RT1G 0.22000 RFQ

Manufacturers in Transistors - Bipolar (BJT) - Single

NXP USA Inc. Nexperia USA Inc. Microsemi Corporation Toshiba Semiconductor and Storage Diotec Semiconductor Central Semiconductor Corp Rectron USA NTE Electronics, Inc Sanken Sanyo Ampleon USA Inc.

Need a Quote for BSP52E6327HTSA1?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Transistors - Bipolar (BJT) - Single
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →