Name: BSP299H6327XUSA1
Brand: Infineon Technologies
SKU: BSP299H6327XUSA1
Availability: InStock

REF: BSP299H6327XUSA1 Infineon Technologies

BSP299H6327XUSA1

MOSFET N-CH 500V 400MA SOT223-4

BSP299H6327XUSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 500V 400MA SOT223-4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 5,600

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA