Name: BSP295E6327T
Brand: Infineon Technologies
SKU: BSP295E6327T
Availability: InStock

REF: BSP295E6327T Infineon Technologies

BSP295E6327T

MOSFET N-CH 60V 1.8A SOT223-4

BSP295E6327T is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 60V 1.8A SOT223-4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 6,852

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id	1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	368 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA