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BSM75GB170DN2HOSA1

In Stock: 642
BSM75GB170DN2HOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: BSM75GB170DN2HOSA1 Infineon Technologies
BSM75GB170DN2HOSA1

Infineon Technologies

IGBT MOD 1700V 110A 625W

BSM75GB170DN2HOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1700V 110A 625W. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case Module, current - collector (ic) (max) 110 A.

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In Stock: 642

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector (Ic) (Max)110 A
Power - Max625 W
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 75A
Current - Collector Cutoff (Max)-
Input Capacitance (Cies) @ Vce11 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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