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BSM75GAR120DN2HOSA1

In Stock: 19
BSM75GAR120DN2HOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: BSM75GAR120DN2HOSA1 Infineon Technologies
BSM75GAR120DN2HOSA1

Infineon Technologies

IGBT MOD 1200V 30A 235W

BSM75GAR120DN2HOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 30A 235W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 175°C (TJ), package / case Module, current - collector (ic) (max) 30 A.

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In Stock: 19

Specifications

15 parameters
Product StatusObsolete
IGBT TypeTrench Field Stop
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)30 A
Power - Max235 W
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 15A
Current - Collector Cutoff (Max)400 µA
Input Capacitance (Cies) @ Vce1 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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