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BSM50GP120BOSA1

In Stock: 2,384
BSM50GP120BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: BSM50GP120BOSA1 Infineon Technologies
BSM50GP120BOSA1

Infineon Technologies

IGBT MODULE 1200V 50A

BSM50GP120BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MODULE 1200V 50A. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C, package / case Module, current - collector (ic) (max) 80 A.

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In Stock: 2,384

Specifications

15 parameters
Product StatusNot For New Designs
IGBT Type-
Configuration3 Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)80 A
Power - Max-
Vce(on) (Max) @ Vge, Ic2.55V @ 15V, 50A
Current - Collector Cutoff (Max)500 µA
Input Capacitance (Cies) @ Vce3.3 pF @ 25 V
InputThree Phase Bridge Rectifier
NTC ThermistorYes
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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