BSM50GD120DN2E3226BOSA1

In Stock: 7,736
BSM50GD120DN2E3226BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: BSM50GD120DN2E3226BOSA1 Infineon Technologies
BSM50GD120DN2E3226BOSA1

Infineon Technologies

IGBT MOD 1200V 50A 350W

BSM50GD120DN2E3226BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 50A 350W. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case Module, current - collector (ic) (max) 50 A.

In Stock: 7,736

Specifications

15 parameters
Product StatusNot For New Designs
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)50 A
Power - Max350 W
Vce(on) (Max) @ Vge, Ic3V @ 15V, 50A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce3.3 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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